direct gate

英 [dəˈrekt ɡeɪt] 美 [dəˈrekt ɡeɪt]

网络  直接澆口; 直接浇口; 直浇口; 直接闸口; 直接口

机械



双语例句

  1. Best-selling: The Jiangsu and Zhejiang provinces Shanghai-free installment ( factory direct sale) orders visits, gate: Durable, maintains for a year, the lifelong maintenance!
    畅销:江浙沪-费安装(家直销)货上门,门:经久耐用,保修一年,终身保养!
  2. The device by the human operator launches, such as through the cone-shaped gear reducer drive, direct drive valve stem up and down movement of the valve gate.
    本装置由人力操作手轮,通过锥形齿轮等减速传动,直接驱动阀门阀杆上下移动,启闭阀门。
  3. Simulation of Direct Tunneling Current in MOSFET with Si_3N_4 Gate
    Si3N4栅MOS器件的隧穿电流模拟
  4. A New Direct Tunneling Gate Current Model for Short Channel MOSFETs with HALO Structure
    一个适用于短沟HALO结构MOS器件的直接隧穿栅电流模型
  5. It can separate and characterize different traps in an ultra-thin direct tunneling gate oxide, and extract the parameters of an oxide trap, such as the generation/ capture cross section and density.
    该弛豫谱保持了原有弛豫谱技术直接、快速和方便的优点,能够分离和表征超薄栅MOS结构不同氧化层陷阱,提取氧化层陷阱的产生/俘获截面、陷阱密度等陷阱参数。
  6. Combine with the direct digital synthesizer ( DDS) technology, use field programmable gate array ( FPGA) chip as control unit, directly generate the sine pulse width modulation ( SPWM).
    本文主要描述利用FPGA现场可编程门阵列器件作为控制核心,结合DDS数字频率合成技术直接形成SPWM脉宽调制波。
  7. It's observed that three obvious spectrum peaks coexist in the proportional differential spectroscopy of direct tunneling gate current.
    实验结果发现超薄栅氧化层直接隧道栅电流的比例差分谱存在明显的三个谱峰。
  8. TA method that using the direct digital frequency synthesis ( DDFS) produce circumrotating electric field is introduced in this paper. This method depends on the field programmable gate array ( FPGA).
    介绍了一种基于可编程逻辑门阵列电路穴FPGA雪,用直接数字频率合成穴DDFS雪技术产生旋转电场的方法。
  9. A direct integration method is achieved for determining unit gate function responses of time invariant linear systems, which is found to be simpler than those ordinary determining methods under certain circumstances.
    本文得出了求定线性非时变系统的单位门函数响应的直接积分法,在一些情况下比一般求定方法简捷。
  10. This model could also be used to calculate direct tunneling currents of MOST with high-k gate dielectrics or stacked gate dielectrics.
    该计算模型还可以用于高介电常数栅介质和多层栅介质MOS器件的直接隧穿电流的计算。
  11. Direct Tunneling Relaxation Spectroscopy in Ultrathin Gate Oxide MOS Structures Under Constant Pressure Stress
    超薄栅MOS结构恒压应力下的直接隧穿弛豫谱
  12. The dissertation firstly introduces the development of frequency synthesis techniques, and discusses the significance of realizing the direct digital frequency technique based on Field Programmable Gate Array ( FPGA).
    本文首先介绍了频率合成器的发展,并阐述了基于现场可编程门阵列(FPGA)实现DDS技术的意义;
  13. According to project request, an experiment waveform generation of a radar system has implement by Direct Digital Synthesis ( DDS) and Field Programmable Gate Array ( FPGA) technologies, which can generate variable waveforms and modes.
    本文根据某雷达系统的总体要求,采用直接数字频率合成(DDS)和FPGA技术,设计并成功研制出多波形、多功能的雷达波形产生器。
  14. Direct Computation of Convolution Integrals by Gate Function
    运用闸门函数直接解算卷积积分
  15. Modeling of DT ( direct tunneling) current in ultra-thin gate oxide n MOSFET's is researched.
    研究了超薄栅氧MOS器件的直接隧穿(directtunneling,DT)电流模型问题。
  16. Utilizing precise analog conditioner, direct digital synthesizer ( DDS), field programmable gate array ( FPGA), a frequency and sensitivity adjustable, high sensitive and high dependable vehicle detector is presented in this paper.
    利用精密模拟调理器、DDS、FPGA等技术实现了频率、灵敏度可调的高灵敏度、高可靠性车辆检测系统。
  17. The growth laws of hot carrier damage of PMOSFET's during the hot carrier degradation and the high field annealing are studied by direct gate current measurement.
    通过直接栅电流测量方法研究了热载流子退化和高栅压退火过程中PMOSFET's热载流子损伤的生长规律。
  18. This preamplifier has been fabricated using 0.2 μ m GaAs-based pHEMT EB direct writing T-shaped gate technology and tested at a data rate of 10 Gbit/ s.
    电路采用0.2μmGaAs基pHEMT电子束直写T型栅工艺制作。对制作的电路进行了电测试,可工作于10Gbit/s的速率。
  19. Hot-Carrier Damage of PMOSFET's Identified by Direct Gate Current Measurement
    通过直接栅电流测量研究PMOSFET's热载流子损伤
  20. As a consequence, static leakage power due to direct tunneling through the gate oxide has been increasing at an exponential rate.
    由于栅介质氧化层的直接隧穿而引起的静态功率损耗随之成指数形式增长,传统的SiO2栅介质正日益趋于它的极限。
  21. The monitoring system of gate can display the gate opening, the system load, direct load and other important real-time parameter, the dynamic simulation display of gate, sound and light alarm function, gate up and down and stop control function, system parameter setting function.
    上位闸门监控系统能够实时显示闸门开度、系统荷载、直接荷载等重要实时参数;闸门提升动态模拟显示功能;声光报警功能;闸门升、降、停实时上位控制功能;系统参数上位设置功能。